type ipp034n03l g ipb034n03l g opti mos ? 3 power-transistor features ? fast switching mosfet for smps ? optimized technology for dc/dc converters ? qualified according to jedec 1) for target applications ? n-channel, logic level ? excellent gate charge x r ds(on) product (fom) ? very low on-resistance r ds(on) ? avalanche rated ? pb-free plating; rohs compliant ? halogen-free according to iec61249-2-21 maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current i d v gs =10 v, t c =25 c 80 a v gs =10 v, t c =100 c 80 v gs =4.5 v, t c =25 c 80 v gs =4.5 v, t c =100 c 77 pulsed drain current 2) i d,pulse t c =25 c 400 avalanche current, single pulse 3) i as t c =25 c 80 avalanche energy, single pulse e as i d =80 a, r gs =25 w 70 mj reverse diode d v /d t d v /d t i d =80 a, v ds =24 v, d i /d t =200 a/s, t j,max =175 c 6 kv/s gate source voltage v gs 20 v value 1) j-std20 and jesd22 v ds 30 v r ds(on),max 3.4 m w i d 80 a product summary type ipp034n03l g ipb034n03l g package pg-to220-3-1 pg-to263-3 marking 034n03l 034n03l rev. 2.0 page 1 2010-02-19
ipp034n03l g ipb034n03l g maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit power dissipation p tot t c =25 c 94 w operating and storage temperature t j , t stg -55 ... 175 c iec climatic category; din iec 68-1 55/175/56 parameter symbol conditions unit min. typ. max. thermal characteristics thermal resistance, junction - case r thjc - - 1.6 k/w smd version, device on pcb r thja minimal footprint - - 62 6 cm2 cooling area 4) - - 40 electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =0 v, i d =1 ma 30 - - v gate threshold voltage v gs(th) v ds = v gs , i d =250 a 1 - 2.2 zero gate voltage drain current i dss v ds =30 v, v gs =0 v, t j =25 c - 0.1 1 a v ds =30 v, v gs =0 v, t j =125 c - 10 100 gate-source leakage current i gss v gs =20 v, v ds =0 v - 10 100 na r ds(on) v gs =4.5 v, i d =30 a - 3.8 4.7 m w v gs =10 v, i d =30 a - 2.8 3.4 gate resistance r g - 1.6 - w transconductance g fs | v ds |>2| i d | r ds(on)max , i d =30 a 50 100 - s 4) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 wit h 6 cm2 (one layer, 70 m thick) copper area for dr ain connection. pcb is vertical in still air. 5) measured from drain tab to source pin 3) see figure 13 for more detailed information value values 2) see figure 3 for more detailed information drain-source on-state resistance 5) rev. 2.0 page 2 2010-02-19
ipp034n03l g ipb034n03l g parameter symbol conditions unit min. typ. max. dynamic characteristics input capacitance c iss - 4000 5300 pf output capacitance c oss - 1400 1900 reverse transfer capacitance c rss - 81 - turn-on delay time t d(on) - 9.2 - ns rise time t r - 6.4 - turn-off delay time t d(off) - 35 - fall time t f - 5.4 - gate charge characteristics 5) gate to source charge q gs - 12 - nc gate charge at threshold q g(th) - 6.3 - gate to drain charge q gd - 5.6 - switching charge q sw - 11 - gate charge total q g - 25 - gate plateau voltage v plateau - 2.9 - v gate charge total q g v dd =15 v, i d =30 a, v gs =0 to 10 v - 51 - gate charge total, sync. fet q g(sync) v ds =0.1 v, v gs =0 to 4.5 v - 21 - nc output charge q oss v dd =15 v, v gs =0 v - 37 - reverse diode diode continuous forward current i s - - 80 a diode pulse current i s,pulse - - 320 diode forward voltage v sd v gs =0 v, i f =30 a, t j =25 c - 0.83 1.1 v reverse recovery charge q rr v r =15 v, i f = i s , d i f /d t =400 a/s - - 20 nc 6) see figure 16 for gate charge parameter definition t c =25 c values v gs =0 v, v ds =15 v, f =1 mhz v dd =15 v, v gs =10 v, i d =30 a, r g =1.6 w v dd =15 v, i d =30 a, v gs =0 to 4.5 v rev. 2.0 page 3 2010-02-19
ipp034n03l g ipb034n03l g 1 power dissipation 2 drain current p tot =f( t c ) i d =f( t c ); v gs 10 v 3 safe operating area 4 max. transient thermal imped ance i d =f( v ds ); t c =25 c; d =0 z thjc =f( t p ) parameter: t p parameter: d = t p / t 1 s 10 s 100 s 1 ms 10 ms dc 10 2 10 1 10 0 10 -1 10 3 10 2 10 1 10 0 10 -1 v ds [v] i d [a] limited by on-state resistance single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 0 10 -1 10 -2 10 -3 10 -4 10 -5 10 -6 0.01 0.1 1 10 0 0 0 0 0 0 1 t p [s] z thjc [k/w] 0 20 40 60 80 100 0 50 100 150 200 t c [c] p tot [w] 0 20 40 60 80 100 0 50 100 150 200 t c [c] i d [a] rev. 2.0 page 4 2010-02-19
ipp034n03l g ipb034n03l g 5 typ. output characteristics 6 typ. drain-source on resistance i d =f( v ds ); t j =25 c r ds(on) =f( i d ); t j =25 c parameter: v gs parameter: v gs 7 typ. transfer characteristics 8 typ. forward trans conductance i d =f( v gs ); | v ds |>2| i d | r ds(on)max g fs =f( i d ); t j =25 c parameter: t j 3 v 3.2 v 3.5 v 4 v 4.5 v 5 v 10 v 11.5 v 0 4 8 12 16 0 20 40 60 80 100 i d [a] r ds(on) [m w ww w ] 25 c 175 c 0 40 80 120 160 0 1 2 3 4 5 v gs [v] i d [a] 0 40 80 120 160 0 20 40 60 80 100 i d [a] g fs [s] 2.8 v 3 v 3.2 v 3.5 v 4 v 4.5 v 5 v 10 v 0 40 80 120 160 0 1 2 3 v ds [v] i d [a] rev. 2.0 page 5 2010-02-19
ipp034n03l g ipb034n03l g 9 drain-source on-state resistance 10 typ. gate thre shold voltage r ds(on) =f( t j ); i d =30 a; v gs =10 v v gs(th) =f( t j ); v gs = v ds ; i d =250 a 11 typ. capacitances 12 forward characteristics of r everse diode c =f( v ds ); v gs =0 v; f =1 mhz i f =f( v sd ) parameter: t j typ 98 % 0 1 2 3 4 5 6 7 -60 -20 20 60 100 140 180 t j [c] r ds(on) [m w ww w ] 0 0.5 1 1.5 2 2.5 -60 -20 20 60 100 140 180 t j [c] v gs(th) [v] ciss coss crss 10 4 10 3 10 2 10 1 10 100 1000 10000 0 5 10 15 20 25 30 v ds [v] c [pf] 25 c 175 c 25 c, 98% 175 c, 98% 1 10 100 1000 0.0 0.5 1.0 1.5 2.0 v sd [v] i f [a] rev. 2.0 page 6 2010-02-19
ipp034n03l g ipb034n03l g 13 avalanche characteristics 14 typ. gate charge i as =f( t av ); r gs =25 w v gs =f( q gate ); i d =30 a pulsed parameter: t j(start) parameter: v dd 15 drain-source breakdown voltage 16 gate charge wav eforms v br(dss) =f( t j ); i d =1 ma 20 22 24 26 28 30 32 34 -60 -20 20 60 100 140 180 t j [c] v br(dss) [v] v gs q g ate v g s(th) q g(th) q g s q g d q sw q g 25 c 100 c 150 c 10 3 10 2 10 1 10 0 10 -1 1 10 100 t av [s] i av [a] 6 v 15 v 24 v 0 2 4 6 8 10 12 0 10 20 30 40 50 60 q gate [nc] v gs [v] rev. 2.0 page 7 2010-02-19
ipp034n03l g ipb034n03l g package outline pg-to220-3-1 footprint: packaging: rev. 2.0 page 8 2010-02-19
ipp034n03l g ipb034n03l g package outline pg-to263-3 rev. 2.0 page 9 2010-02-19
ipp034n03l g ipb034n03l g published by published by published by published by infineon technologies ag infineon technologies ag infineon technologies ag infineon technologies ag 81726 mnchen, germany 81726 mnchen, germany 81726 mnchen, germany 81726 mnchen, germany ? infineon technologies ag 2006. ? infineon technologies ag 2006. ? infineon technologies ag 2006. ? infineon technologies ag 2006. all rights reserved. all rights reserved. all rights reserved. all rights reserved. attention please! attention please! attention please! attention please!the information given in this data sheet shall in no event be regarded as a guarantee of conditions orcharacteristics (beschaffenheitsgarantie). with respect to any examples or hints given herein, any typicalvalues stated herein and/or any information regarding the application of the device, infineon techno logies hereby disclaims any and all warranties and liabilities of any kind, including without limitation wa rranties ofnon-infringement of intellectual property rights of any third party. information information information informationfor further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office (www.infineon.com www.infineon.com www.infineon.com www.infineon.com ). warnings warnings warnings warningsdue to technical requirements components may contain dangerous substances. for information on the ty pesin question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the expres s written approval of infineon technologies, if a failure of such components can reasonably be expect ed tocause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to suppor t and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the he alth of the user or other persons may be endangered. rev. 2.0 page 10 2010-02-19
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